Introduction
Parameter:
Solar Grade Mono-Crystalline Silicon Ingot |
||
Type |
P |
N |
Dopant |
Boron |
Ph |
Resistivity |
0.5-3Ω.cm 3-6Ω.cm |
|
Diameter |
6"-8" |
|
Orientation |
<100>±2° |
|
Life Time |
≥10 μs |
|
Dislocation Density |
<3000 at/cm2 |
|
Oxygen Content |
≤1.0×1018 at/ cm3 |
|
Carbon Content |
≤5.0×1016 at /cm3 |
|
Length |
According to require |